smd type ic smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SD2114K features high dc current gain. high emitter-base voltage. low v ce (sat) . electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage bv cbo i c =10a 25 v collector-emitter breakdown voltage bv ceo i c =1ma 20 v emitter-base breakdown voltage bv ebo i e =10a 12 v collector cutoff current i cbo v cb =20v 0.5 a emitter cutoff current i ebo v eb =10v 0.5 a collector-emitter saturation voltage v ce(sat) i c /i b =500ma/20ma 0.18 0.4 v dc current transfer ratio h fe v ce =3v, i c =10ma 820 2700 output capacitance * f t v ce =10v, i e = -50ma, f=100mhz 350 mhz transition frequency c ob v cb =10v, i e =0, f=1mhz 8.0 pf output on-resistance r on i b =1ma, vi=100mv(rms), f=1khz 0.8 * measured using pulse current. h fe classification marking rank v w h fe 820 1800 1200 2700 bb absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 25 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 12 v 0.5 1* collector power dissipation p c 0.2 w junction temperature tj 150 storage temperature t stg -55to+150 * single pulse pw=100ms. collector current i c a smd type ic smd type transistors smd type smd type smd type ic smd type smd type ic smd type smd type smd type ic smd type smd type smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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